Chemical beam epitaxial growth of GaAs and InAs

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Abstract
Growth characteristics of GaAs using triethyl-Ga (TEGa) and trimethyl-Ga (TMGa), and of InAs using trimethyl-In (ThIn) are found to be quite similar in many aspects. A reaction model in which the chemical kinetics of the adsorbed Ga alkyls dominates is able to account for the growth characteristics using TEGa throughout the entire growth temperature range. The existence of the intermediate species assumed in this model is confirmed by a recent mass spectroscopic study. This reaction model discussed here provides a microscopic understanding of the chemical beam epitaxial growth process.

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