Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers
- 29 April 1996
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (18) , 2547-2549
- https://doi.org/10.1063/1.116179
Abstract
Infrared reflection spectroscopy is applied to state-of-the-art thin film heterostructures of group-III nitrides on sapphire and Si substrates. The individual layers of GaN and AlGaN and the AlN buffer layer are identified by their phonon frequencies. Under non-perpendicular incidence of the light, A1(LO) phonon modes are observed in the wurtzite system. The presence of the very thin AlN buffer layer manifests itself in clear features of the AlN phonons. The A1(LO) phonon mode energy is determined in AlxGa1−xN for x≊0.15. Raman spectra confirm our findings.Keywords
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