Structure and simulation of GaAs TUNNETT and MITATT devices for frequencies above 100 GHz
- 30 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- A generalized simulation method for MITATT-mode operation and studies on the influence of tunnel current on IMPATT propertiesSemiconductor Science and Technology, 1992
- Tunnel transit‐time (tunnett) devices for terahertz sourcesMicrowave and Optical Technology Letters, 1991
- Improved relaxation-time formulation of collision terms for two-band hydrodynamic modelsSolid-State Electronics, 1989
- The Monte Carlo Method for Semiconductor Device SimulationPublished by Springer Nature ,1989
- Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effectsPhysical Review B, 1988
- Simulation of GaAs IMPATT diodes including energy and velocity transport equationsIEEE Transactions on Electron Devices, 1983
- IMPATT device simulation and propertiesIEEE Transactions on Electron Devices, 1977
- Transport equations for electrons in two-valley semiconductorsIEEE Transactions on Electron Devices, 1970
- Zener tunneling in semiconductorsJournal of Physics and Chemistry of Solids, 1960