Observation of polarization-dependent electroabsorption in (In,Ga)As/GaAs modulator structures oriented in the [110] crystallographic direction
- 22 November 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (21) , 2881-2883
- https://doi.org/10.1063/1.110313
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Molecular beam epitaxial growth of (Al,Ga)As/GaAs heterostructures and Si doping characterization study on vicinal (110) GaAs substratesJournal of Crystal Growth, 1993
- Resonant tunneling in thin-barrier multiple-quantum-well electroabsorption modulatorsJournal of the Optical Society of America B, 1992
- Optical Matrix Elements in (110)-Oriented Quantum WellsJapanese Journal of Applied Physics, 1991
- Anisotropic optical properties of (110)-oriented quantum wellsPhysical Review B, 1991
- InxGa1−xAs/GaAs multiple quantum well optical modulators for the 1.02–1.07 μm wavelength rangeApplied Physics Letters, 1990
- Theory of semiconductor superlattice electronic structureReviews of Modern Physics, 1990
- Piezoelectric effects in strained-layer superlatticesJournal of Applied Physics, 1988
- Electroabsorption in an InGaAs/GaAs strained-layer multiple quantum well structureApplied Physics Letters, 1986
- Novel hybrid optically bistable switch: The quantum well self-electro-optic effect deviceApplied Physics Letters, 1984
- High-speed optical modulation with GaAs/GaAlAs quantum wells in a p-i-n diode structureApplied Physics Letters, 1984