Depth profile detection limit of 3×1015 atom cm−3 for As in Si using Cs+ bombardment negative secondary ion mass spectrometry
- 1 June 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (11) , 559-561
- https://doi.org/10.1063/1.89259
Abstract
Depth profiles of As‐implanted silicon samples have been determined by secondary ion mass spectrometry in order to establish a practical detection limit for As in Si. By monitoring the AsSi− species, produced in high yield by Cs+ ion bombardment, it is shown that As is detectable down to a background count limit of ∼3×1015 atom cm−3 (50 ppb) during a depth profile of a 250‐μm square area.Keywords
This publication has 2 references indexed in Scilit:
- Binding energies in atomic negative ionsJournal of Physical and Chemical Reference Data, 1975
- Enhanced diffusion during the implantation of arsenic in siliconApplied Physics Letters, 1973