Density and Energy of Surface States on Cleaved Surfaces of Germanium
- 15 January 1963
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 129 (2) , 608-613
- https://doi.org/10.1103/physrev.129.608
Abstract
The channel technique has been successfully applied to measurement of the properties of cleaved germanium surfaces. A clean germanium surface is highly type with the Fermi level near the valence band at the surface. This is brought about by acceptor-like surface states close to the edge of the valence band with a density of at least 1.5×/. The density of these low-lying surface states decreases when the surface is exposed to oxygen. A comparison is made between results on cleaved surfaces and surfaces cleaned by ion bombardment.
Keywords
This publication has 18 references indexed in Scilit:
- Surface States on Cleaved SiliconPhysical Review Letters, 1961
- Impurity conduction of cleaned germanium surfaces at low temperaturesJournal of Physics and Chemistry of Solids, 1960
- Electrical properties of cleaved germanium surfacesJournal of Physics and Chemistry of Solids, 1960
- Surface measurements on freshly cleaved silicon p-n junctionsJournal of Physics and Chemistry of Solids, 1960
- The adsorption of oxygen on clean silicon surfacesJournal of Physics and Chemistry of Solids, 1960
- Cleaning of Silicon Surfaces by Heating in High VacuumJournal of Applied Physics, 1959
- Electrical Properties of Clean Germanium SurfacesProceedings of the Physical Society, 1958
- Free Bonds on the Clean Surfaces of Germanium Single CrystalsJournal of the Physics Society Japan, 1957
- Adsorption of Gases on a Silicon SurfaceThe Journal of Physical Chemistry, 1956
- Ion Bombardment-Cleaning of Germanium and Titanium as Determined by Low-Energy Electron DiffractionJournal of Applied Physics, 1955