Crystallization kinetics of amorphous Si/SiO2 superlattice structures
- 1 June 1988
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 102 (1-3) , 130-135
- https://doi.org/10.1016/0022-3093(88)90123-8
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Dominant Influence of Beam-Induced Interface Rearrangement on Solid-Phase Epitaxial Crystallization of Amorphous SiliconPhysical Review Letters, 1985
- Solid-phase crystallization kinetics in dopeda-Si chemical-vapor-deposition filmsPhysical Review B, 1985
- Growth and structure of layered amorphous semiconductorsJournal of Non-Crystalline Solids, 1984
- Properties of amorphous semiconducting multilayer filmsJournal of Non-Crystalline Solids, 1984
- Quantitative analysis of the bond rearrangement process during solid phase epitaxy of amorphous siliconPhilosophical Magazine Part B, 1984
- Lateral solid phase epitaxy of amorphous Si films on Si substrates with SiO2 patternsApplied Physics Letters, 1983
- Amorphous Semiconductor SuperlatticesPhysical Review Letters, 1983
- A structural model for the interface between amorphous and (100) crystalline siliconPhilosophical Magazine Part B, 1981
- A structural model for the interface between amorphous and crystalline Si or GeActa Metallurgica, 1978
- Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous SiJournal of Applied Physics, 1978