Characterization of anisotype and isotype Hg0.8Cd0.2Te/CdTe heterojunctions

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Abstract
The metallurgical heterojunction located between liquid phase epitaxial Hg0.8Cd0.2Te films and CdTe substrates is characterized electrically and electro-optically for the first time. This compositionally graded heterojunction is found to have zero bias resistance-area R0A products ranging from 102 to 105 Ω cm2 at 300 K, and from 106 to 109 Ω cm2 at 100 K. Between these two temperatures thermal activation energies of approximately 0.4 eV and 0.1 eV are measured. Measurements of capacitance, photoresponse position, and spectral sensitivity lead to the conclusion that a charge-separating depletion region and valence band barrier are located within the transition region, and are associated with the high R0A products. These conclusions are supported by numerically calculated band diagrams.

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