On the temperature dependence of peak electron velocity and threshold field measured on GaAs Gunn diodes
- 1 February 1977
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 39 (2) , K123-K125
- https://doi.org/10.1002/pssa.2210390253
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Determination of semiconductor−metal contact resistance by an angle−dependent geometrical magnetoresistance methodApplied Physics Letters, 1975
- Influence of impurity scattering on current oscillations in Gunn diodesPhysica Status Solidi (a), 1974
- The temperature variation of low field electron mobility in n-GaAsPhysics Letters A, 1973
- Temperature Dependence of the Velocity Field Characteristics of n-Type Gallium ArsenideJapanese Journal of Applied Physics, 1971
- Temperature Dependence of the Transport Properties of Gallium Arsenide Determined by a Monte Carlo MethodJournal of Applied Physics, 1970
- Variation of velocity/field curve of GaAs in the temperature range 40–180°CElectronics Letters, 1969
- Transport Properties of GaAsPhysical Review B, 1968