Abstract
This paper describes a new method of surface potential measurement for MIS infrared focal plane arrays. The key feature of this method is a charge sensitive amplifier which detects the surface potential directly. The surface potential is subject to photo-generated charge carriers stored in a potential well as well as the gate voltage. Therefore, this measurement can be used for both electronic and optical characterization of an MIS infrared imager such as an infrared charge coupled device (IRCCD) or an infrared charge injection device (IRCCD). Mercury cadmium telluride (HgCdTe) IRCIDs with 3 x 5 pixels were evaluated using this technique. The measurement was controlled by HP System 35 and proved more accurate, informative, and speedy than the conventional capacitance-voltage (C-V) measurement.© (1982) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.