Atomic structure of one monolayer of GaAs on Si(111)
- 15 May 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 37 (14) , 8513-8515
- https://doi.org/10.1103/physrevb.37.8513
Abstract
Total-energy and force calculations have been performed for thin overlayers of GaAs on a Si(111) substrate. The calculated atomic positions are compared with recent x-ray standing-wave measurements. The atomic positions obtained for the structure in which the stacking sequence is...SiSiGaAsSiAs are in the best agreement with the x-ray standing-wave measurements. This structure has a significantly lower total energy than the structure...SiSiSiAsGaAs.Keywords
This publication has 17 references indexed in Scilit:
- Interface formation of GaAs with Si(100), Si(111), and Ge(111): Core-level spectroscopy for monolayer coverages of GaAs, Ga, and AsPhysical Review B, 1987
- Location of atoms in the first monolayer of GaAs on SiPhysical Review Letters, 1987
- Theory of static structural properties, crystal stability, and phase transformations: Application to Si and GePhysical Review B, 1982
- Theory of lattice-dynamical properties of solids: Application to Si and GePhysical Review B, 1982
- Relativistic norm-conserving pseudopotentialsPhysical Review B, 1982
- Microscopic Theory of the Phase Transformation and Lattice Dynamics of SiPhysical Review Letters, 1980
- Ground State of the Electron Gas by a Stochastic MethodPhysical Review Letters, 1980
- Norm-Conserving PseudopotentialsPhysical Review Letters, 1979
- Self-Consistent Equations Including Exchange and Correlation EffectsPhysical Review B, 1965
- Inhomogeneous Electron GasPhysical Review B, 1964