Design considerations for improving low-temperature noise performance of silicon JFET's
- 28 February 1975
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 18 (2) , 199-207
- https://doi.org/10.1016/0038-1101(75)90103-3
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Temperature dependence of low-frequency excess noise in junction-gate FET'sIEEE Transactions on Electron Devices, 1972
- Carrier density fluctuation noise in silicon junction field effect transistors at low temperaturesSolid-State Electronics, 1971
- Low-frequency generation noise in junction field effect transistorsSolid-State Electronics, 1965
- Electrical Properties of Silicon Containing Arsenic and BoronPhysical Review B, 1954