Low-leakage InGaAs photodiodes grown on gaAs substrates using a graded strained-layer superlattice

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Abstract
InxGa1–xAs layers with In concentrations up to 35% have been grown on GaAs substrates by MOCVD using a GaAs/InxGa1–xAs superlattice with graded layer thicknesses to accommodate the lattice mismatch. 105 μm-diameter PIN diodes fabricated from this material have leakage currents below 1 nA at – 10 V, comparable to devices from lattice-matched material on InP substrates.