Electron Hall mobility of n-GaN
- 10 April 1995
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (15) , 1972-1973
- https://doi.org/10.1063/1.113294
Abstract
It is known that recently published electron Hall mobility data by J. G. Kim, A. C. Frenkel, H. Liu, and R. M. Park [Appl. Phys. Lett. 65, 91 (1994)] for cubic GaN at 300 K are in excellent agreement with theoretical calculations of Hall mobility for uncompensated material. The Hall scattering factor is calculated and Hall effect free‐electron concentration data are corrected for samples with free‐electron concentrations of 7.24×1017 cm−3 and 1.74×1018 cm−3. The corresponding experimental/theoretical Hall mobility is 760/744 and 530/543. Hence, agreement between theory and experiment is demonstrated within 2.5%.Keywords
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