High-speed GaAlAs/GaAs p-i-n photodiode on a semi-insulating GaAs substrate
- 1 August 1983
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (3) , 261-262
- https://doi.org/10.1063/1.94319
Abstract
A high‐speed, high‐responsivity GaAlAs/GaAs p‐i‐n photodiode has been fabricated on a GaAs semi‐insulating substrate. The 75‐μm‐diam photodiode has a 3‐dB bandwidth of 2.5 GHz and responsivity of 0.45 A/W at 8400 Å (external quantum efficiency of 65%). The diode is suitable for monolithic integration with other optoelectronic devices.Keywords
This publication has 4 references indexed in Scilit:
- 20-GHz bandwidth GaAs photodiodeApplied Physics Letters, 1983
- GaAs integrated optoelectronicsIEEE Transactions on Electron Devices, 1982
- A novel heterostructure interdigital photodetector (HIP) with picosecond optical responseIEEE Electron Device Letters, 1981
- GaAs m.e.s.f.e.t.: a high-speed optical detectorElectronics Letters, 1977