Microstructure of dielectric thin films formed by e-beam coevaporation

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Abstract
X-ray diffraction measurements were made on a series of mixed films in the ZrO2–MgO and ZrO2–SiO2 systems as part of a larger study to investigate the relationship between processing parameters and morphology of dielectric thin films produced by coevaporation. The primary interest was to determine if amorphous coatings produced by coevaporation would have optical properties superior to their polycrystalline counterparts as is the case in the bulk. The first experiments involved determining the importance of both quantity and composition of dopants which could be used to achieve amorphous films. While using x-ray diffraction to evaluate the extent of film crystallinity in doped ZrO2 films, it was observed that first the lattice spacing normal to the film-substrate interface progressively decreased as either MgO or SiO2 were added and that upon reaching 46 and 21 mol%, respectively, the crystallinity disappeared completely. The intent of this work is to present these results and discuss their possible significance.

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