Passivation properties and interfacial chemistry of photochemically deposited SiO2 on Hg0.70Cd0.30Te

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Abstract
SiO2 deposited photochemically at a substrate temperature of 100 °C has been evaluated as a surface passivant on Hg1−xCdxTe (x=0.30). It has been determined that the electrical properties of the (Hg, Cd)Te–SiO2 interface are dependent on the pretreatment given the semiconductor surface prior to the insulator deposition. Formation of a thin native oxide on the (Hg, Cd)Te surface during the pretreatment appears to enhance the resultant (Hg, Cd)Te–SiO2 interface properties. A significant spread in the (Hg, Cd)Te–SiO2 interface properties is observed, likely owing to the nature of how this native oxide forms and interactions between the native oxide and the SiH4 in the photochemical reactor. It is shown through neutron activation analysis that the Hg employed as a photochemical sensitizer is incorporated in the SiO2 at a concentration of 1.8 ppm.

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