Valence- and conduction-band electronic structure of wurtzite CdSe

The combination of angle-resolved photoelectron and inverse photoelectron spectroscopy has been used to sutdy the electronic band structure of wurtzite CdSe over a 15-eV-wide energy range. Transitions in the uv region involving valence- and conduction-band states along the Γ-M line in the hexagonal Brillouin zone are interpreted within a direct-transition model where the final (photoemission) or initial (inverse photoemission) state is approximated by a free-electron state. The energies of four critical points at M and the predicted energy of the optical transition $F_1$ are compared with previous theoretical and experimental results.