Efficiency calculations for thin-film polycrystalline semiconductor Schottky barrier solar cells
- 1 April 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 24 (4) , 392-396
- https://doi.org/10.1109/t-ed.1977.18746
Abstract
Numerical calculations have been made of the effect of grain size on the short-circuit current and the AM1 efficiency of polycrystalline thin film InP, GaAs, and Si Schottky barrier solar cells. Si cells 10 µm thick are at best 8 percent efficient for 100-µm grain sizes; 25-µm-thick Si cells can be about 10 percent efficient for this grain size. GaAs cells 2 µm thick can be 12 percent efficient for grain sizes of 3 µm or greater.Keywords
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