Carrier dynamics modeling in a precharged Si/CaF2 heterostructure
- 1 June 2001
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 89 (11) , 6281-6284
- https://doi.org/10.1063/1.1367878
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Epitaxial Growth and Electrical Characteristics of CaF2/Si/CaF2 Resonant Tunneling Diode Structures Grown on Si(111) 1°-off SubstrateJapanese Journal of Applied Physics, 2000
- Current oscillations in semiconductor-insulator multiple quantum wellsPhysical Review B, 1999
- Resonant Tunneling Diodes in Si/CaF 2 Heterostructures Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1999
- Electroluminescence simulation of multiquantum well silicon structuresJournal of Applied Physics, 1999
- Interface and bulk effects in the attenuation of low-energy electrons throughthin filmsPhysical Review B, 1998
- Grain effect in electronic properties of silicon epitaxial nanostructuresComputational Materials Science, 1998
- Theory of current-voltage instabilities in superlatticesPhysical Review B, 1993
- Epitaxial relations and electrical properties of low-temperature-grown CaF2 on Si(111)Journal of Vacuum Science & Technology A, 1992
- Electrical properties of low-temperature-grown CaF2 on Si(111)Applied Physics Letters, 1992
- Current-voltage instabilities in superlatticesPhysical Review B, 1991