Properties of p-CuInSe2/Al Schottky devices
- 16 April 1986
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 94 (2) , K153-K158
- https://doi.org/10.1002/pssa.2210940270
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Polycrystalline thin-film CuInSe2/CdZnS solar cellsIEEE Transactions on Electron Devices, 1984
- Space-charge-limited current effects in n-type CuInSe2/Au Schottky diodesJournal of Applied Physics, 1981
- Photovoltaics IV: Advanced materials: Both polycrystalline and tandem cells promise higher efficiencies than siliconIEEE Spectrum, 1980
- Electrical Properties of p- and n-Type CuInSe2Single CrystalsJapanese Journal of Applied Physics, 1979
- Efficient CuInSe2/CdS solar cellsApplied Physics Letters, 1975
- Electrical properties of CuInSe2 single crystalsSolid-State Electronics, 1973