Optical properties of diamond and silicon from a tight-binding model, with local microscopic fields included
- 14 October 1976
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 9 (19) , 3583-3593
- https://doi.org/10.1088/0022-3719/9/19/012
Abstract
A tight-binding Hamiltonian in a bonding-antibonding basis is used to evaluate the optical dielectric response, within the random phase approximation, for diamond and silicon. The authors include the effects of local microscopic fields, and compare the results with experiment. They also discuss theoretically how local fields should affect the optical response, and why the next term beyond the random phase approximation gives only a negligible contribution to the response.Keywords
This publication has 13 references indexed in Scilit:
- Local-field and excitonic effects in the optical spectrum of a covalent crystalPhysical Review B, 1975
- Local-Field Effects in the Optical Spectrum of SiliconPhysical Review Letters, 1975
- Dielectric Response in the Wannier Representation: Application to the Optical Spectrum of DiamondPhysical Review Letters, 1974
- Dielectric response in semiconductorsJournal of Physics C: Solid State Physics, 1974
- Dielectric-screening matrix and lattice dynamics of SiPhysical Review B, 1974
- Microscopic Theory of Dielectric Screening and Lattice Dynamics in the Wannier Representation. I. TheoryPhysical Review B, 1973
- First-Principles Calculation of the Optical Absorption in DiamondPhysical Review B, 1972
- Dielectric Matrix and Phonon Frequencies in SiliconPhysical Review Letters, 1972
- Ab InitioCalculation of the Electronic Structure and Optical Properties of Diamond Using the Discrete Variational MethodPhysical Review B, 1971
- Optical Properties of SemiconductorsPhysical Review B, 1963