The Annealing Time and Temperature Dependence of Electrical Dopant Activation in High‐Dose BF 2 Ion Implanted Silicon
- 1 November 1994
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 141 (11) , 3158-3161
- https://doi.org/10.1149/1.2059294
Abstract
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