Ultrafast relaxation of photoexcited holes inn-doped III-V compounds studied by femtosecond luminescence
- 15 February 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 45 (7) , 3886-3889
- https://doi.org/10.1103/physrevb.45.3886
Abstract
We present time-resolved measurements of the relaxation of photoexcited holes in n-doped GaAs and InP with 100 fs time resolution. The band-edge luminescence is predominantly controlled by the hole dynamics, when the optical excitation density is much lower than the doping density. Information on the electron-hole scattering and hole-phonon scattering rates is obtained by varying the doping density. Thermal equilibrium between hot holes and lattice is found to be established on a subpicosecond time scale.Keywords
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