Reproducible fabrication of AlGaAs/GaAs circular buried heterostructure (CBH) surface-emitting lasers with low thresholds

Abstract
The fabrication process for circular buried-heterostructure surface-emitting lasers has been improved to increase the uniformity of the active region diameter. Circular mesas of 8 μm diameter can now be consistently prepared and lowthreshold surface-emitting lasers (30–60 mA at room temperature pulsed conditions) are obtained.

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