Measurements of the response function of silicon diode detectors for heavy ions using a time of flight technique
- 1 June 1992
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- Vol. 317 (1-2) , 235-241
- https://doi.org/10.1016/0168-9002(92)90613-9
Abstract
No abstract availableThis publication has 29 references indexed in Scilit:
- High resolution alpha spectroscopy with low cost photodiodesPublished by Elsevier ,2002
- Pulse height defects for 16O, 35Cl and 81Br ions in silicon surface barrier detectorsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1990
- The detection of heavy ions with PIN diodesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1990
- H+ and He+ spectroscopy using silicon pin photodiodesNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1988
- Charge Collection Measurements for Energetic Ions in SiliconIEEE Transactions on Nuclear Science, 1982
- Plasma and recombination effects in the fission fragment pulse height defect in a surface barrier detectorNuclear Instruments and Methods, 1979
- Pulse height defect and window energy loss of low energy ions in surface barrier detectorsNuclear Instruments and Methods, 1978
- Pulse-height defects for heavy ions in a silicon surface-barrier detectorNuclear Instruments and Methods, 1971
- Pulse Height Defect and Energy Dispersion in Semiconductor DetectorsReview of Scientific Instruments, 1966
- Ion Drift in an n-p JunctionJournal of Applied Physics, 1960