Studies of growth kinetics and polytypism of silicon carbide epitaxial layers grown from the vapour phase
- 1 November 1976
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 36 (1) , 147-151
- https://doi.org/10.1016/0022-0248(76)90226-8
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Growth Studies of Silicon Carbide CrystalsJournal of the Electrochemical Society, 1966
- Transport of Solid through the Gas Phase Using a Single Heterogeneous EquilibriumThe Journal of Chemical Physics, 1962