The growth and properties of Mn-doped single-crystal InP
- 30 June 1982
- journal article
- Published by Elsevier in Materials Letters
- Vol. 1 (1) , 14-18
- https://doi.org/10.1016/0167-577x(82)90031-3
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- The growth of dislocation-free Ge-DOPED InPJournal of Crystal Growth, 1981
- Impurity effect on grown-in dislocation density of InP and GaAs crystalsJournal of Applied Physics, 1978
- Precipitates in Fe-doped InPMaterials Research Bulletin, 1977
- Eutectic formation in chromium-doped indium phosphideJournal of Crystal Growth, 1974
- Crystal growth and properties of group IV doped indium phosphideJournal of Crystal Growth, 1972
- Liquid encapsulation crystal pulling at high pressuresJournal of Crystal Growth, 1968