Optical Beam Induced Current Techniques for Failure Analysis of Very Large Scale Integrated Circuits Devices
- 1 June 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (6R) , 3393-3401
- https://doi.org/10.1143/jjap.33.3393
Abstract
In failure analysis of complementary metal oxide semiconductor (CMOS) very large scale integrated (VLSI) circuits using optical beam induced current (OBIC) techniques, circuit analysis was carried out by studying the flow path of detected photocurrents for the first time. This circuit analysis revealed that the OBIC current can be detected even on a good unit. Furthermore, this gave a clear explanation as to the reason why the suspected failure site detected by OBIC and emission microscopy analyses did not always occur at the same site as the defect. This study showed that there is a high possibility of detecting a failure due to metal-metal short by OBIC analysis.Keywords
This publication has 1 reference indexed in Scilit:
- Detection and localization of gate oxide shorts in MOS transistors by optical-beam-induced currentIEEE Transactions on Electron Devices, 1991