Electrical Properties of Rapid Quenched Bi4Ti3O12 Amorphous Ribbons

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Abstract
The electrical properties before and after annealing for rapid quenched Bi4Ti3O12 amorphous ribbons have been studied. Before crystallization, its dielectric breakdown strength is very high, while its dielectric constant is rather low since it is non-ferroelectricity. After crystallization, its room temperature dielectric constant becomes higher than that for a sample prepared by ordinary firing method. For instance, the value for the sample annealed at 650°C is 300, which is about two times as large as that for the latter. Similar behaviors on the ferroelectric and breakdown properties of the annealed sample are also observed.

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