Room-Temperature Electrical Properties of Ten I-III-VI2 Semiconductors
- 1 May 1972
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (5) , 2469-2470
- https://doi.org/10.1063/1.1661532
Abstract
The room‐temperature electrical properties of ten I‐III‐VI2 (I=Cu, Ag; III=Al, Ga, In; VI=S, Se) compounds are presented. The resistivities of eight of these compounds are rapidly changed by annealing under maximum and minimum chalcogen pressures. The Cu compounds can readily be made p type, a feature lacking in the analogous II‐VI compounds. However, the Cu compounds with energy gaps of 1.7 eV or above have not been made n type.This publication has 5 references indexed in Scilit:
- Optical and Electrical Properties of AgGaand AgGaPhysical Review B, 1971
- Visible Stimulated Emission in Ternary Chalcopyrite Sulfides and SelenidesApplied Physics Letters, 1971
- Electrical Properties, Optical Properties, and Band Structure of CuGaand CuInPhysical Review B, 1971
- Preparation and properties of single crystal CuAlS2 and CuAlSe2Journal of Physics and Chemistry of Solids, 1969
- CuGaSe2 and AgInSe2: Preparation and properties of single crystalsJournal of Physics and Chemistry of Solids, 1966