The effect of body resistance on the breakdown characteristics of SOI MOSFET's
- 1 June 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 41 (6) , 1063-1066
- https://doi.org/10.1109/16.293322
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Premature breakdown in non-fully depleted SOI/MOSFETs with body-tied-to-source structurePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Analysis and control of floating-body bipolar effects in fully depleted submicrometer SOI MOSFET'sIEEE Transactions on Electron Devices, 1991
- Avalanche-induced drain-source breakdown in silicon-on-insulator n-MOSFETsIEEE Transactions on Electron Devices, 1988
- VIA-4 avalanche-induced breakdown mechanisms in short-channel MOSFETsIEEE Transactions on Electron Devices, 1982