The thermal dissociation of decaborane on Si(111)-(7×7) and doping effects in the near surface region
- 1 October 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 72 (7) , 3155-3160
- https://doi.org/10.1063/1.351477
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Dissociation of Individual Molecules with Electrons from the Tip of a Scanning Tunneling MicroscopeScience, 1992
- Thermal and photochemical oxidation of Si(111): Doping effect and the reaction mechanismPhysical Review B, 1991
- Hole plasmon excitations on ap-type GaAs(110) surfacePhysical Review B, 1991
- Influence of surface reconstruction on the orientation of homoepitaxial silicon filmsPhysical Review Letters, 1990
- Electronic structure of Si(111)-B(√3 × √3 )R30° studied by Si 2pand B 1score-level photoelectron spectroscopyPhysical Review B, 1990
- Adsorption of boron on Si(111): Its effect on surface electronic states and reconstructionPhysical Review Letters, 1989
- Surface doping and stabilization of Si(111) with boronPhysical Review Letters, 1989
- Structure determination of the Si(111):B(√3×√3)R30° surface: Subsurface substitutional dopingPhysical Review Letters, 1989
- Chemical vapor deposition of boron and boron nitride from decaborane(14)Journal of Vacuum Science & Technology A, 1989
- The Course of Base-catalyzed Hydrogen Exchange in Decaborane1Journal of the American Chemical Society, 1959