Enhanced relaxation oscillation frequency and reduced nonlinear K-factor in InGaAs/InGaAsP MQW λ/4-shifted DFB lasers
- 25 October 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (22) , 1841-1843
- https://doi.org/10.1049/el:19901185
Abstract
The relaxation oscillation frequency, fr, of 1.55 μm InGaAs/InGaAsP MQW λ/4-shifted DFB lasers was doubled by increasing the carrier injection efficiency into each quantum well, which results from an optimised bandgap energy and optimised thickness of the barrier layers. The nonlinear K-factor which determines the maximum modulation band-width through the damping phenomenon can be reduced by dopting a p-type modulation doped MQW structure in the active layer.Keywords
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