Range Profiles of 300- and 475-eVIons and the Diffusivity ofin Tungsten
- 19 February 1979
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 42 (8) , 515-518
- https://doi.org/10.1103/physrevlett.42.515
Abstract
Range profiles for 300- and 475-eV ions implanted in situ in tungsten at 60, 61, 80, 90 K were measured, directly and absolutely, employing an atom-probe field-ion microscope. A mean range () of 40 ± 4 Å and a parent standard deviation () of 20 to 36 Å was obtained for 300-eV ; values of and of 56 ± 6 Å and 37 to 42 Å, respectively, were determined for 475-eV . The existence of an isolated and immobile interstitial atom was established and an enthalpy change of migration of 0.24 and 0.32 eV was determined.
Keywords
This publication has 10 references indexed in Scilit:
- Computer studies of the reflection of light ions from solidsPublished by Elsevier ,2002
- Helium irradiations of copper at 1 to 25 keV: range profiles, reemission, and blisteringCanadian Journal of Physics, 1978
- Frenkel pair creation and stage I recovery in W crystals irradiated near thresholdRadiation Effects, 1978
- A review of recent theoretical developments in the understanding of the migration of helium in metals and its interaction with lattice defectsRadiation Effects, 1977
- Comment on "Free Migration of Interstitials in Tungsten"Physical Review Letters, 1975
- The volume change of migration of the stage I self-interstitial atom in ion-irradiated tungstenRadiation Effects, 1975
- Rare gas complexes in tungstenRadiation Effects, 1974
- The interaction of injected helium with lattice defects in a tungsten crystalRadiation Effects, 1972
- An in situ field ion microscope study of irradiated tungstenPhilosophical Magazine, 1971
- The Atom-Probe Field Ion MicroscopeReview of Scientific Instruments, 1968