Prospects for terabit-scale nanoelectronic memories

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Abstract
We have calculated the minimu mc hip are aoverhead, and hence the bit density reduction, that may be achieved by memory array reconfiguration (bad bit exclusion), combined with error correction code techniques, in prospective terabit-scale hybrid semiconductor/nanodevice memories, as a function of the nanodevice fabrication yield and the micro-to-nano pitch ratio. The results show that by using the best (but hardly practicable) reconfiguration and block size optimization, hybrid memories with a pitch ratio of 10 may overcome purely semiconductor memories in useful bit density if the fraction of bad nanodevices is below ∼15%, while in order to get an order-of-magnitude advantage in density, the number of bad devices has to be decreased to ∼2%. For the simple 'Repair Most' technique of bad bit exclusion, complemented with the Hamming-code error correction, these numbers are close to 2% and 0.1%, respectively. When applied to purely semiconductor memories, the same technique allows us to reduce the chip area 'swelling' to just 40% at as many as 0.1% of bad devices. We have also estimated the power and speed of the hybrid memories and have found that, at ar easonable choice of nanodevice resistance, both the additional power an ds peed loss due to the nanodevice subsystem may be negligible. (Some figures in this article are in colour only in the electronic version)