Surface electrical breakdown and leakage current on semi-insulating InP

28 March 1985

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 21 (7) , 299-301
https://doi.org/10.1049/el:19850214

Abstract

Surface electrical breakdown on a semi-insulating InP substrate is investigated. The surface is bare or passivated with anodic oxide, SiO₂ or Si₃N₄ The observed breakdown voltage is about one order of magnitude higher than that of semi-insulating GaAs. The leakage current is sensitive to passivation processes and a thin anodic oxide gives the lowest leakage.

Keywords

BREAKDOWN VOLTAGE
III-V SEMICONDUCTOR
SIO2
SURFACE ELECTRICAL BREAKDOWN
PASSIVATION
SEMIINSULATING SUBSTRATE
SI3N4
LEAKAGE CURRENT
INP
ANODIC OXIDE

This publication has 1 reference indexed in Scilit:

Properties of Surface Passivation Dielectrics for GaAs Integrated Circuits
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1983