Abstract
High-purity copper coatings have been prepared by chemical vapour deposition at low temperature from two nove bis[N-(fluoroalkyl)salicylaldiminato] chelates of copper(II). When hydrogen is used as the carrier gas at ambient pressure, copper coatings containing < 1 atom.% carbon, oxygen, nitrogen, and fluorine are generated at 290 and 330 °C using Cu(NCH2CF2CF3-SAL)2 and Cu(NCH2CF2CF2CF3-SAL)2, respectively (SAL = salicylaldiminato). When the deposition is carried out in vacuo, ca. 6% carbon, 2% oxygen, and 3% fluorine are incorporated into the films using Cu(NCH2CF2CF3-SAL)2 as the copper source.

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