Growth kinetics of Si-molecular beam epitaxy
- 1 June 1982
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 28 (2) , 129-135
- https://doi.org/10.1007/bf00617144
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- Crystal Defects of Silicon Films Formed by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1980
- Si–MBE: Growth and Sb dopingJournal of Vacuum Science and Technology, 1979
- An MOS field-effect transistor fabricated on a molecular-beam epitaxial silicon layerApplied Physics Letters, 1979
- Molecular beam and solid-phase epitaxies of silicon under ultra-high vacuumJournal of Crystal Growth, 1978
- p–n junctions in the surface region of silicon obtained by evaporation of silicon in ultrahigh vacuumPhysica Status Solidi (a), 1978
- Si Molecular Beam Epitaxy (n on n+) with Wide Range Doping ControlJournal of the Electrochemical Society, 1977
- Acceptor dopants in silicon molecular-beam epitaxyJournal of Applied Physics, 1977
- A one-dimensional SiGe superlattice grown by UHV epitaxyApplied Physics A, 1975
- Influence of impurities on the surface structures and fault generation in homoepitaxial Si (111) filmsSurface Science, 1971
- STUDY OF THE EARLY STAGES OF THE EPITAXY OF SILICON ON SILICONApplied Physics Letters, 1966