p-n junction detector directly integrated with (Ga1−xAlx)As LOC-DBR laser
- 1 February 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (3) , 179-181
- https://doi.org/10.1063/1.89981
Abstract
Integration of a GaAs‐ (Ga1−xAlx)As LOC‐DBR laser with a detector is demonstrated. For integrated laser‐detector pairs in which the laser output is coupled to the detector via a 460‐μm‐long interconnecting waveguide, differential transfer efficiencies around 1% are measured. Threshold current densities as low as 6.4 kA/cm2 around room temperature are obtained.Keywords
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