Photoluminescence spectra of Sn doped GaAs epitaxial layers: Influence of epitaxial process parameters
- 1 October 1975
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 36 (10) , 1067-1072
- https://doi.org/10.1016/0022-3697(75)90046-3
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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