Is enhanced interstitial oxygen diffusion necessary to explain the kinetics of precipitation in silicon at temperatures below 650 degrees C?
- 1 January 1987
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 2 (1) , 14-19
- https://doi.org/10.1088/0268-1242/2/1/002
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
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