Noise model for double barrier resonant tunnel diodes
- 7 November 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 27 (23) , 2158-2160
- https://doi.org/10.1049/el:19911336
Abstract
A model for the noise of double barrier resonant tunnel diodes has been made on the assumption that shot noise is the main noise source. Feedback caused by the space charge in the quantum well increases the noise in the negative-resistance region and decreases it in the other regions of the I-V characteristic. This is confirmed by experiments.Keywords
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