(InAs) 1 /(GaAs) 4 Superlattice strained quantum well laser at 980 nm
- 24 October 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 27 (22) , 2009-2011
- https://doi.org/10.1049/el:19911244
Abstract
The first successful MBE growth of (InAs)1/(GaAs)4 short-period superlattice (SPS) strained quantum well lasers emitting at ∼980nm is reported. The SPS consists of six periods of one and four monolayers of InAs and GaAs, respectively. The measured threshold current density was ∼ 100 A cm−2 for 0.96 mm long lasers. Devices have operated up to l70°C with a characteristic temperature T0 of 148K. The (InAs)m/(GaAs)n superlattice is an ordered counterpart of the InGaAs random alloy, and provides an alternative method of fabricating high speed electronic and photonic devices.Keywords
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