Small signal time-of-flight transients
- 15 March 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (6) , 1985-1989
- https://doi.org/10.1063/1.334383
Abstract
The behavior of a pulse shaped charge disturbance injected into a low-conductivity semiconductor in the presence of traps is investigated. The statistical moments are used to characterize the charge distribution curve as a function of position and time under the condition of a constant electric field. In the limit when the first and second moments are sufficient to characterize the charge distribution an explicit expression for the small signal transient waveform is given and discussed.This publication has 7 references indexed in Scilit:
- Trap-controlled transient current injection in amorphous materialsJournal of Non-Crystalline Solids, 1978
- Experimental characterization of elution profiles in gas chromatography using central statistical moments : Study of the relationship between these moments and mass transfer kinetics in the columnJournal of Chromatography A, 1977
- Theory of trap-controlled transient photoconductionPhysical Review B, 1977
- Small-Signal Current Transients in Insulators with TrapsPhysical Review B, 1967
- On the dispersion of linear kinematic wavesProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1958
- Transit Time Measurements of Charge Carriers in Amorphous Selenium FilmsProceedings of the Physical Society. Section B, 1957
- The Mobility and Life of Injected Holes and Electrons in GermaniumPhysical Review B, 1951