OEICs for WDM transceiver modules fabricated by reactive ion etching on semi-insulating substrates

4 June 1992

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 28 (12) , 1084-1085
https://doi.org/10.1049/el:19920685

Abstract

The design and fabrication of OEICs on semi-insulating InP substrates comprising 1300nm DFB lasers, 1300/1530 nm wavelength duplexers and monitor photodiodes is described. OEIC lasing thresholds were as low as 20mA. The throughstate crosstalk for the integrated duplexer was typically — 12dB. Linear tracking of the laser output by the monitor photodiode was achieved with sensitivities in the region of 70μA/mW. The OEICs operated successfully in a 622Mbit/s bidirectional optical link.

Keywords

WAVELENGTH DUPLEXERS
DFB LASERS
20 MA
LINEAR TRACKING
BIDIRECTIONAL OPTICAL LINK
THROUGH-STATE CROSSTALK
1300 NM
OEICS
REACTIVE ION ETCHING
INP
622 MBIT/S
SEMI-INSULATING SUBSTRATES
OEIC LASING THRESHOLDS
MONITOR PHOTODIODES
WDM TRANSCEIVER MODULES

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