Narrow lobe emission of high power broad stripe laser in external resonator cavity
- 19 January 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (2) , 112-114
- https://doi.org/10.1049/el:19890083
Abstract
Near-diffraction limited single lobe emission of an AlGaAs broad stripe laser diode is achieved up to 2.8 times threshold bias (650 mW free running output power) by placing the laser in a external resonator cavity with an angle selective reflection.Keywords
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