1/f noise in modulation-doped field effect transistors
- 1 January 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 4 (1) , 12-13
- https://doi.org/10.1109/edl.1983.25628
Abstract
Low frequency noise measurements are reported in modulation-doped GaAs field effect transistors. The noise spectrum is1/fand is relatively large. At a given frequency the equivalent saturated diode current Ieqvaries as V2, as expected for a fluctuating resistor, and saturates when the characteristic saturates.Keywords
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