Character of the dependences of non-equilibrium electron and hole lifetimes on the concentration of recombination centres in impurity-type-recombination semiconductors
- 30 June 1995
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 38 (6) , 1247-1252
- https://doi.org/10.1016/0038-1101(94)00154-8
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Transient Recombination of Excess Carriers in SemiconductorsPhysical Review B, 1958
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952
- Electron-Hole Recombination in GermaniumPhysical Review B, 1952