On the shrinkage of rod-shaped defects in boron-ion-implanted silicon
- 1 September 1977
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (9) , 3742-3746
- https://doi.org/10.1063/1.324292
Abstract
Three different types of rod‐shaped defects formed during postimplantation annealing of boron‐implanted silicon are distinguished in annealing experiments carried out on transmission electron microscope specimens. It is shown that rod‐shaped defects can be boron precipitates, Frank dipoles, or perfect a/2 dL/dt at three different temperatures for a given isolated defect. Boron diffusion appeared to be the rate‐determining process. The second type, Frank dipoles, were often observed to unfault, transforming into the third type during annealing. At the time of unfaulting the newly formed perfect dipole was always observed to rotate on its glide cylinder to near edge orientation.This publication has 3 references indexed in Scilit:
- The nature of rod-like defects observed in boron irradiated siliconRadiation Effects, 1972
- Radiation-Induced Precipitation in Silicon During High-Voltage Electron Microscope ObservationJournal of Applied Physics, 1971
- Investigation of point defects in silicon and germanium by non-irradiation techniquesRadiation Effects, 1971